HGT1S3N60A4DS9A

Fairchild Semiconductor

HGT1S3N60A4DS9A

Analog & Power

N-CHANNEL IGBT

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge21 nC
Input TypeStandard
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusObsolete
Reverse Recovery Time (trr)29 ns
Switching Energy37µJ (on), 25µJ (off)
Td (on/off) @ 25°C6ns/73ns
Test Condition390V, 3A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 3A

Electrical

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)17 A
Current - Collector Pulsed (Icm)40 A
Power - Max70 W

Mechanical

PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK (TO-263)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)