HGT1S2N120CN

Fairchild Semiconductor

HGT1S2N120CN

Analog & Power

N-CHANNEL IGBT

ObsoleteTO-262-3 Long Leads, I²Pak, TO-262AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge30 nC
IGBT TypeNPT
Input TypeStandard
ManufacturerFairchild Semiconductor
Mounting TypeThrough Hole
Product StatusObsolete
Switching Energy96µJ (on), 355µJ (off)
Td (on/off) @ 25°C25ns/205ns
Test Condition960V, 2.6A, 51Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 2.6A

Electrical

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)13 A
Current - Collector Pulsed (Icm)20 A
Power - Max104 W

Mechanical

PackageTube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

Environmental

Operating Temperature-55°C~150°C(TJ)