HGT1S12N60A4DS

Fairchild Semiconductor

HGT1S12N60A4DS

Analog & Power

IGBT, 54A, 600V, N-CHANNEL, TO-2

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge120 nC
Input TypeStandard
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)30 ns
Switching Energy55µJ (on), 50µJ (off)
Td (on/off) @ 25°C17ns/96ns
Test Condition390V, 12A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A

Electrical

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)54 A
Current - Collector Pulsed (Icm)96 A
Power - Max167 W

Mechanical

PackageBulk
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

Environmental

Operating Temperature-55°C~150°C(TJ)