FDZ3N513ZT

Fairchild Semiconductor

FDZ3N513ZT

Analog & Power

MOSFET P-CH 30V 1.1A 4WLCSP

Active4-XFBGA, WLCSPAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs462mOhm @ 300mA, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds85 pF @ 15 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+5.5V, -300mV
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C1.1A
Max Power Dissipation1W (Ta)

Mechanical

PackageBulk
Package / Case4-XFBGA, WLCSP
Supplier Device Package4-WLCSP (1x1)

Environmental

Operating Temperature-55°C~125°C(TJ)