FDU6696

Fairchild Semiconductor

FDU6696

Analog & Power

N-CHANNEL POWER MOSFET

ActiveTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8mOhm @ 13A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1715 pF @ 15 V
ManufacturerFairchild Semiconductor
Mounting TypeThrough Hole
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 50A (Tc)
Max Power Dissipation1.6W (Ta), 52W (Tc)

Mechanical

PackageBulk
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

Environmental

Operating Temperature-55°C~175°C(TJ)