FDS6900S

Fairchild Semiconductor

FDS6900S

Analog & Power

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V
Base Product NumberFDS69
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V, 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds771pF @ 15V, 1238pF @ 15V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA, 3V @ 1mA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C6.9A (Ta), 8.2A (Ta)
Power - Max900mW (Ta)

Mechanical

PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)