FDR836P

Fairchild Semiconductor

FDR836P

Analog & Power

P-CHANNEL MOSFET

Active8-LSOP (0.130", 3.30mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 6.1A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 25 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C6.1A (Ta)
Max Power Dissipation900mW (Ta)

Mechanical

PackageBulk
Package / Case8-LSOP (0.130", 3.30mm Width)
Supplier Device PackageSuperSOT™-8

Environmental

Operating Temperature-55°C~150°C(TJ)