FDP8442-F085

Fairchild Semiconductor

FDP8442-F085

Analog & Power

POWER FIELD-EFFECT TRANSISTOR, 2

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.1mOhm @ 80A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12200 pF @ 25 V
ManufacturerFairchild Semiconductor
Mounting TypeThrough Hole
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 80A (Tc)
Max Power Dissipation254W (Tc)

Mechanical

PackageBulk

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101