FDMS7672

Fairchild Semiconductor

FDMS7672

Analog & Power

POWER FIELD-EFFECT TRANSISTOR, 1

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5mOhm @ 19A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2960 pF @ 15 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 28A (Tc)
Max Power Dissipation2.5W (Ta), 48W (Tc)

Mechanical

PackageBulk
Package / Case8-PowerTDFN
Supplier Device PackagePower56

Environmental

Operating Temperature-55°C~150°C(TJ)