FDME820NZT

Fairchild Semiconductor

FDME820NZT

Analog & Power

SMALL SIGNAL FIELD-EFFECT TRANSI

Active6-PowerUFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs18mOhm @ 9A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds865 pF @ 10 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
PackagingBulk
Part StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Max Power Dissipation2.1W (Ta)

Mechanical

Package / Case6-PowerUFDFN
Supplier Device PackageMicroFet 1.6x1.6 Thin

Environmental

Operating Temperature-55°C ~ 150°C (TJ)