FDM3300NZ

Fairchild Semiconductor

FDM3300NZ

Analog & Power

MOSFET 2N-CH 20V 10A POWER33

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs23mOhm @ 10A, 4.5V
Base Product NumberFDM3300
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1610pF @ 10V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C10A
Power - Max900mW

Mechanical

PackageBulk
Package / Case8-PowerVDFN
Supplier Device PackagePower33

Environmental

Operating Temperature-55°C ~ 150°C (TJ)