FDM2509NZ

Fairchild Semiconductor

FDM2509NZ

Analog & Power

MOSFET 2N-CH 20V 8.7A MICRO2X2

Obsolete6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs18mOhm @ 8.7A, 4.5V
Base Product NumberFDM2509
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 10V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C8.7A
Power - Max800mW

Mechanical

PackageBulk
Package / Case6-UDFN Exposed Pad
Supplier Device PackageMicroFET 2x2 Thin

Environmental

Operating Temperature-55°C ~ 150°C (TJ)