FDB8870

Fairchild Semiconductor

FDB8870

Analog & Power

MOSFET N-CH 30V 23A/160A TO263AB

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.9mOhm @ 35A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 15 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 160A (Tc)
Max Power Dissipation160W (Tc)

Mechanical

PackageBulk
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK (TO-263)

Environmental

Operating Temperature-55°C~175°C(TJ)