FDB8030L

Fairchild Semiconductor

FDB8030L

Analog & Power

80A, 30V, 0.0035OHM, N-CHANNEL

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.5mOhm @ 80A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs170 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds10500 pF @ 15 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C80A (Ta)
Max Power Dissipation187W (Tc)

Mechanical

PackageBulk
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

Environmental

Operating Temperature-65°C~175°C(TJ)