FDB6030BL

Fairchild Semiconductor

FDB6030BL

Analog & Power

MOSFET N-CH 30V 40A R-6

ObsoleteTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs18mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1160 pF @ 15 V
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Max Power Dissipation60W (Tc)

Mechanical

PackageBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D2PAK)

Environmental

Operating Temperature-65°C ~ 175°C (TJ)