FBG10N05AC

Name: FBG10N05AC
Brand: EPC Space, LLC

Analog & Power

GAN FET HEMT 100V5A COTS 4FSMD-A

Active4-SMD, No LeadAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	44mOhm @ 5A, 5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	233 pF @ 50 V
Manufacturer	EPC Space, LLC
Mounting Type	Surface Mount
Product Status	Active
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	+6V, -4V
Vgs(th) (Max) @ Id	2.5V @ 1.2mA

Drain-to-Source Voltage	100 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)

Operating Temperature	-55°C~150°C(TJ)