FBG04N30BC

EPC Space, LLC

FBG04N30BC

Datasheet

Analog & Power

GAN FET HEMT 40V30A COTS 4FSMD-B

Active4-SMD, No LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 30A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 20 V
ManufacturerEPC Space, LLC
Mounting TypeSurface Mount
Product StatusActive
SeriesFSMD-B
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)+6V, -4V
Vgs(th) (Max) @ Id2.5V @ 9mA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C30A (Tc)

Mechanical

PackageBulk
Package / Case4-SMD, No Lead
Supplier Device Package4-SMD

Environmental

Operating Temperature-55°C ~ 150°C (TJ)