EPC7007BC

EPC Space, LLC

EPC7007BC

Datasheet

Analog & Power

GAN FET HEMT200V18A COTS 4FSMD-B

Active4-SMD, No LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs28mOhm @ 18A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds525 pF @ 100 V
ManufacturerEPC Space, LLC
Mounting TypeSurface Mount
Product StatusActive
Seriese-GaN®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+6V, -4V
Vgs(th) (Max) @ Id2.5V @ 3mA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C18A (Tc)

Mechanical

PackageBulk
Package / Case4-SMD, No Lead
Supplier Device Package4-SMD

Environmental

Operating Temperature-55°C ~ 150°C (TJ)