EPC2203

EPC

EPC2203

Datasheet

Analog & Power

GANFET N-CH 80V 1.7A DIE

ActiveDieAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs80mOhm @ 1A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds88 pF @ 50 V
ManufacturerEPC
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, eGaN®
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)+5.75V, -4V
Vgs(th) (Max) @ Id2.5V @ 600µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseDie
Supplier Device PackageDie

Environmental

Operating Temperature-40°C~150°C(TJ)