EPC2110

EPC

EPC2110

Datasheet

Analog & Power

GANFET 2N-CH 120V 3.4A DIE

ActiveDieAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 4A, 5V
Base Product NumberEPC211
Configuration2 N-Channel (Dual) Common Source
Gate Charge (Qg) (Max) @ Vgs0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds80pF @ 60V
ManufacturerEPC
Product StatusActive
SerieseGaN®
TechnologyGaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id2.5V @ 700µA

Electrical

Drain-to-Source Voltage120V
Current - Continuous Drain (Id) @ 25°C3.4A

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseDie
Supplier Device PackageDie

Environmental

Operating Temperature-40°C ~ 150°C (TJ)