EPC2106

EPC

EPC2106

Datasheet

Analog & Power

GANFET 2N-CH 100V 1.7A DIE

ActiveDieAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs70mOhm @ 2A, 5V
Base Product NumberEPC210
Configuration2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds75pF @ 50V
ManufacturerEPC
Mounting TypeSurface Mount
Product StatusActive
SerieseGaN®
TechnologyGaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id2.5V @ 600µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C1.7A

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseDie
Supplier Device PackageDie

Environmental

Operating Temperature-40°C ~ 150°C (TJ)