EPC2105

EPC

EPC2105

Datasheet

Analog & Power

GANFET 2N-CH 80V 9.5A/38A DIE

ActiveDieAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Base Product NumberEPC210
Configuration2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 40V, 1100pF @ 40V
ManufacturerEPC
Mounting TypeSurface Mount
Product StatusActive
SerieseGaN®
TechnologyGaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id2.5V @ 2.5mA, 2.5V @ 10mA

Electrical

Drain-to-Source Voltage80V
Current - Continuous Drain (Id) @ 25°C9.5A, 38A

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseDie
Supplier Device PackageDie

Environmental

Operating Temperature-40°C ~ 150°C (TJ)