EPC2100ENGRT

EPC

EPC2100ENGRT

Datasheet

Analog & Power

GANFET 2 N-CH 30V 9.5A/38A DIE

ActiveDieAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Base Product NumberEPC210
Configuration2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds475pF @ 15V, 1960pF @ 15V
ManufacturerEPC
Mounting TypeSurface Mount
Product StatusActive
SerieseGaN®
TechnologyGaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id2.5V @ 4mA, 2.5V @ 16mA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 40A (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseDie
Supplier Device PackageDie

Environmental

Operating Temperature-40°C ~ 150°C (TJ)