EPC2065

EPC

EPC2065

Datasheet

Analog & Power

GAN FET 80V .0036OHM 8BUMP DIE

ActiveDieAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.6mOhm @ 25A, 5V
FET FeatureStandard
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1449 pF @ 40 V
ManufacturerEPC
Mounting TypeSurface Mount
Product StatusActive
SerieseGaN®
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)+6V, -4V
Vgs(th) (Max) @ Id2.5V @ 7mA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C60A (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseDie
Supplier Device PackageDie

Environmental

Operating Temperature-40°C~150°C(TJ)