EPC2039

EPC

EPC2039

Datasheet

Analog & Power

GANFET N-CH 80V 6.8A DIE

ActiveDieAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 6A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds210 pF @ 40 V
ManufacturerEPC
Mounting TypeSurface Mount
Product StatusActive
SerieseGaN®
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)+6V, -4V
Vgs(th) (Max) @ Id2.5V @ 2mA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C6.8A (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseDie
Supplier Device PackageDie

Environmental

Operating Temperature-40°C~150°C(TJ)