Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 65mOhm @ 1A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.91 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 50 V |
| Manufacturer | EPC |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | eGaN® |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -4V |
| Vgs(th) (Max) @ Id | 2.5V @ 600µA |
| Drain-to-Source Voltage | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature | -40°C ~ 150°C (TJ) |
|---|