General
| Rds On (Max) @ Id, Vgs | 4mOhm @ 33A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 20 V |
| Manufacturer | EPC |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | eGaN® |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -4V |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |