DI7A6N10SQ

Diotec Semiconductor

DI7A6N10SQ

Datasheet

Analog & Power

MOSFET SO8 N 100V 0.02OHM 150C

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 7.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1650 pF @ 25 V
ManufacturerDiotec Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C7.6A (Ta)
Max Power Dissipation2.5W (Ta)

Mechanical

PackageTape & Reel (TR)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101