DI4A7P06SQ2

Diotec Semiconductor

DI4A7P06SQ2

Datasheet

Analog & Power

MOSFET SO8 P -60V -4.7A 0.075OHM

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 5A, 10V
Configuration2 P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds525pF @ 30V
ManufacturerDiotec Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C4.7A (Ta)
Power - Max3W (Ta)

Mechanical

Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101