DI2A8N03PWK2-AQ

Diotec Semiconductor

DI2A8N03PWK2-AQ

Datasheet

Analog & Power

MOSFET, PowerQFN 2x2, 30V, 5A, 1

Obsolete6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs72mOhm @ 2A, 4.5V
Configuration2 N-Channel
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds387pF @ 15V
ManufacturerDiotec Semiconductor
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Power - Max1W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-QFN (2x2)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101