DI110N06D2

Diotec Semiconductor

DI110N06D2

Datasheet

Analog & Power

MOSFET, D2PAK, 60V, 110A, 150C

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.2mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4597 pF @ 25 V
ManufacturerDiotec Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Max Power Dissipation62.5W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackageTO-263AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)