DI0A35N06PGK-AQ

Diotec Semiconductor

DI0A35N06PGK-AQ

Datasheet

Analog & Power

MOSFET, DFN1006-3, 60V, 0.35A, 1

ActiveSC-101, SOT-883Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.4Ohm @ 500mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds32 pF @ 25 V
ManufacturerDiotec Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C350mA
Max Power Dissipation223mW

Mechanical

PackageTape & Reel (TR)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101