DI080N06PQ

Diotec Semiconductor

DI080N06PQ

Datasheet

Analog & Power

MOSFET POWERQFN 5X6 N 65V

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.6mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 30 V
ManufacturerDiotec Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage65 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Max Power Dissipation80W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device Package8-QFN (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)