DI050P02PT

Diotec Semiconductor

DI050P02PT

Datasheet

Analog & Power

MOSFET, PowerQFN 3x3, -20V, -50A

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10mOhm @ 15A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4596 pF @ 10 V
ManufacturerDiotec Semiconductor
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Max Power Dissipation35.7W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device Package8-QFN (3x3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)