DI010N03PW

Diotec Semiconductor

DI010N03PW

Datasheet

Analog & Power

MOSFET POWERQFN 2X2 N 30V 10A 0

Active8-PowerUDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1120 pF @ 15 V
ManufacturerDiotec Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Max Power Dissipation1.4W (Tc)

Mechanical

Package / Case8-PowerUDFN
Supplier Device Package8-QFN (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)