DI006P02PW

Diotec Semiconductor

DI006P02PW

Datasheet

Analog & Power

MOSFET, POWERQFN 2X2, -20V, -6A

Active8-PowerUDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 6A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1242 pF @ 10 V
ManufacturerDiotec Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Max Power Dissipation2W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerUDFN
Supplier Device Package8-QFN (2x2)

Environmental

Operating Temperature-55°C~150°C(TJ)