DI006H03SQ

Diotec Semiconductor

DI006H03SQ

Datasheet

Analog & Power

MOSFET SO8 N+P 30V 0.025OHM 150C

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Configuration2 N and 2 P-Channel (Full Bridge)
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs11.7nC @ 10V, 11.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds590pF @ 15V, 631pF @ 15V
ManufacturerDiotec Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C6A (Ta), 4.2A (Ta)
Power - Max1.5W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101