2N7000

Diotec Semiconductor

2N7000

Datasheet

Analog & Power

MOSFET TO-92 60V 0.2A

ActiveTO-226-3, TO-92-3 (TO-226AA) Formed LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V
ManufacturerDiotec Semiconductor
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Max Power Dissipation350mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92

Environmental

Operating Temperature150°C (TJ)