ZXMN6A25G

Diodes Incorporated

ZXMN6A25G

Datasheet

Analog & Power

MOSFET N-CH 60V 4.8A SOT223

ObsoleteTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 3.6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1063 pF @ 30 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 250µA (Min)

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.8A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)