ZXMN6A09GTA

Diodes Incorporated

ZXMN6A09GTA

Datasheet

Analog & Power

MOSFET N-CH 60V 5.4A SOT223

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs40mOhm @ 8.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1407 pF @ 40 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5.4A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)