ZXMN3A04KTC

Diodes Incorporated

ZXMN3A04KTC

Datasheet

Analog & Power

MOSFET N-CH 30V 18.4A DPAK

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 12A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1890 pF @ 15 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 250mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Max Power Dissipation2.15W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type B)

Environmental

Operating Temperature-55°C~150°C(TJ)