ZXMN3A01E6TC

Diodes Incorporated

ZXMN3A01E6TC

Datasheet

Analog & Power

MOSFET N-CH 30V 2.4A SOT23-6

ObsoleteSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs120mOhm @ 2.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds190 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Max Power Dissipation1.1W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6

Environmental

Operating Temperature-55°C~150°C(TJ)