ZXMN10A08E6TA

Diodes Incorporated

ZXMN10A08E6TA

Datasheet

Analog & Power

MOSFET N-CH 100V 1.5A SOT26

ActiveSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs250mOhm @ 3.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds405 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Max Power Dissipation1.1W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6
Supplier Device PackageSOT-26

Environmental

Operating Temperature-55°C ~ 150°C (TJ)