ZXMHC6A07N8TC

Diodes Incorporated

ZXMHC6A07N8TC

Datasheet

Analog & Power

MOSFET 2N/2P-CH 60V 8-SOIC

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs250mOhm @ 1.8A, 10V
Base Product NumberZXMHC6A07
Configuration2 N and 2 P-Channel (Full Bridge)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds166pF @ 40V, 141pF @ 50V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C1.39A, 1.28A
Power - Max870mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)