ZXMHC10A07N8TC

Diodes Incorporated

ZXMHC10A07N8TC

Datasheet

Analog & Power

MOSFET 2N/2P-CH 100V 0.8A 8SO

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs700mOhm @ 1.5A, 10V
Base Product NumberZXMHC10A07
Configuration2 N and 2 P-Channel (Full Bridge)
Gate Charge (Qg) (Max) @ Vgs2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds138pF @ 60V, 141pF @ 50V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C800mA, 680mA
Power - Max870mW

Mechanical

Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)