ZXMC6A09DN8TA

Diodes Incorporated

ZXMC6A09DN8TA

Datasheet

Analog & Power

MOSFET N/P-CH 60V 3.9A/3.7A 8SO

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 8.2A, 10V
Base Product NumberZXMC6A09
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs24.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1407pF @ 40V, 1580pF @ 40V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA (Min)

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C3.9A, 3.7A
Power - Max1.8W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)