ZXMC10A816N8TC

Diodes Incorporated

ZXMC10A816N8TC

Datasheet

Analog & Power

MOSFET N/P-CH 100V 2A 8SO

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs230mOhm @ 1A, 10V
Base Product NumberZXMC10
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds497pF @ 50V, 717pF @ 50V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 250µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C2A
Power - Max1.8W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)