ZXM62N03GTA

Diodes Incorporated

ZXM62N03GTA

Analog & Power

MOSFET N-CH 30V 3.4A/4.7A SOT223

ObsoleteTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs110mOhm @ 2.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.4A (Ta), 4.7A (Tc)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)