ZVP4525GQTA

Diodes Incorporated

ZVP4525GQTA

Datasheet

Analog & Power

MOSFET BVDSS: 101V~250V SOT223 T

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14Ohm @ 200mA, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds82 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±40V
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage250 V
Drive Voltage (Max Rds On, Min Rds On)3.5V, 10V
Current - Continuous Drain (Id) @ 25°C265mA (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageBulk

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101