DXTN5860DFDB-7

Diodes Incorporated

DXTN5860DFDB-7

Datasheet

Analog & Power

SS LOW SAT TRANSISTOR U-DFN2020

Active3-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic315mV @ 300mA, 6A

Electrical

Voltage - Collector Emitter Breakdown (Max)60 V
Current - Collector (Ic) (Max)6 A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce280 @ 500mA, 2V
Power - Max690 mW
Frequency - Transition115MHz

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case3-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-3 (Type B)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)